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igbt lowlossduopack:igbtintrenchstop tm andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode IKQ120N60TA 600vlowlossswitchingseriesthirdgeneration datasheet industrialpowercontrol
2 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 lowlossduopack:igbtintrenchstop tm andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode features: ?automotiveaec-q101qualified ?designedfordc/acconvertersforautomotiveapplication ?verylowv ce(sat) 1.5v(typ.) ?maximumjunctiontemperature175c ?shortcircuitwithstandtime5s ?100%shortcircuittested ?100%ofthepartsaredynamicallytested ?trenchstop tm andfieldstoptechnologyfor600v applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed ?positivetemperaturecoefficientinv ce(sat) ?lowemi ?lowgatechargeq g ?greenpackage ?verysoft,fastrecoveryantiparallelemittercontrolledhediode applications: ?maininverter ?air-concompressor ?ptcheater ?motordrives keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKQ120N60TA 600v 120a 1.5v 175c k120t60a pg-to247-3 g c e
3 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 g c e
4 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 600 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =135c i c 160.0 120.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 480.0 a turn off safe operating area v ce 600v, t vj 175c, t p =1s - 480.0 a diodeforwardcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =124c i f 160.0 120.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 480.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s powerdissipation t c =25c p tot 833.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, 1) wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, 2) junction - case r th(j-c) 0.18 k/w diode thermal resistance, 2) junction - case r th(j-c) 0.30 k/w thermal resistance junction - ambient r th(j-a) 40 k/w 1) package not recommended for surface mount application 2) thermal resistance of thermal grease r th(c-s) (case to heat sink) of more than 0.1k/w not included. g c e
5 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =120.0a t vj =25c t vj =175c - - 1.50 1.90 2.00 - v diode forward voltage v f v ge =0v, i f =120.0a t vj =25c t vj =175c - - 1.65 1.60 2.05 - v gate-emitter threshold voltage v ge(th) i c =1.90ma, v ce = v ge 4.1 4.9 5.7 v zero gate voltage collector current i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - 3000.0 40.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =120.0a - 75.0 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 7530 - output capacitance c oes - 446 - reverse transfer capacitance c res - 206 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =120.0a, v ge =15v - 772.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 846 - a g c e
6 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 33 - ns rise time t r - 43 - ns turn-off delay time t d(off) - 310 - ns fall time t f - 33 - ns turn-on energy e on - 4.10 - mj turn-off energy e off - 2.80 - mj total switching energy e ts - 6.90 - mj t vj =25c, v cc =400v, i c =120.0a, v ge =0.0/15.0v, r g(on) =3.0 w , r g(off) =3.0 w , l s =63nh, c s =31pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 280 - ns diode reverse recovery charge q rr - 3.50 - c diode peak reverse recovery current i rrm - 25.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -500 - a/s t vj =25c, v r =400v, i f =120.0a, di f /dt =1100a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 33 - ns rise time t r - 51 - ns turn-off delay time t d(off) - 355 - ns fall time t f - 43 - ns turn-on energy e on - 6.70 - mj turn-off energy e off - 4.10 - mj total switching energy e ts - 10.80 - mj t vj =175c, v cc =400v, i c =120.0a, v ge =0.0/15.0v, r g(on) =3.0 w , r g(off) =3.0 w , l s =63nh, c s =31pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 410 - ns diode reverse recovery charge q rr - 10.80 - c diode peak reverse recovery current i rrm - 45.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -520 - a/s t vj =175c, v r =400v, i f =120.0a, di f /dt =1000a/s g c e
7 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 figure 1. safeoperatingarea ( d =0, t c =25c, t j 175c, v ge =0/15v, t p =1s.provenbyproductiontest.) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 800 900 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 figure 4. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 40 80 120 160 200 240 280 320 360 v ge =20v 15v 13v 11v 9v 8v 7v 6v g c e
8 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 figure 5. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 40 80 120 160 200 240 280 320 360 v ge =20v 15v 13v 11v 9v 8v 7v 6v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 8 10 12 14 0 40 80 120 160 200 240 280 320 360 t j =25c t j =175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[a] 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i c =38a i c =75a i c =120a i c =150a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t j =175c, v ce =400v, v ge =15/0v, r g =3 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 25 50 75 100 125 150 175 200 10 100 1000 t d(off) t f t d(on) t r g c e
9 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 figure 9. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t j =175c, v ce =400v, v ge =15/0v, i c =120a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 5 10 15 20 25 10 100 1000 1e+4 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =120a, r g =3 w ,dynamictestcircuitin figure e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =1,9ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t j =175c, v ce =400v, v ge =15/0v, r g =3 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 40 80 120 160 200 240 0 5 10 15 20 25 30 e off e on e ts g c e
10 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 figure 13. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t j =175c, v ce =400v, v ge =15/0v, i c =120a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =120a, r g =3 w ,dynamictestcircuitin figure e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t j =175c, v ge =15/0v, i c =120a, r g =3 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 300 400 500 0 2 4 6 8 10 12 14 16 e off e on e ts figure 16. typicalgatecharge ( i c =120a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 100 200 300 400 500 600 700 800 0 2 4 6 8 10 12 14 16 120v 480v g c e
11 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 12 14 16 18 20 0 200 400 600 800 1000 1200 1400 1600 figure 19. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce =400v,startat t j =25c, t j max 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 2 4 6 8 10 12 figure 20. igbttransientthermalimpedanceasa functionofpulsewidthfordifferentduty cycles d ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.02287591 3.4e-4 2 0.02339848 2.6e-3 3 0.05655137 0.03972432 4 0.0778966 0.2805263 g c e
12 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 figure 21. diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cycles d ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.05706519 6.7e-4 2 0.08400837 9.4e-3 3 0.1653593 0.1178987 figure 22. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 500 700 900 1100 1300 1500 0 100 200 300 400 500 600 700 800 t j =25c, i f = 120a t j =175c, i f = 120a figure 23. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 500 700 900 1100 1300 1500 0 2 4 6 8 10 12 t j =25c, i f = 120a t j =175c, i f = 120a figure 24. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 500 700 900 1100 1300 1500 0 10 20 30 40 50 60 70 t j =25c, i f = 120a t j =175c, i f = 120a g c e
13 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 figure 25. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 500 700 900 1100 1300 1500 -1200 -1000 -800 -600 -400 -200 0 t j =25c, i f = 120a t j =175c, i f = 120a figure 26. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 60 120 180 240 300 360 t j =25c t j =175c figure 27. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i f =38a i f =75a i f =120a i f =150a g c e
14 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 g c e millimeters 5.44 (bsc) c e3 d e d1 d2 l1 e l n e1 b1 a a1 b a2 b2 dim 0.59 1.35 - 20.90 16.25 15.70 1.05 19.80 13.10 3 min 4.90 2.31 1.16 1.90 1.96 0.053 0.823 0.640 0.618 0.023 0.193 0.091 0.046 0.075 0.041 0.077 0.780 0.516 0.66 16.85 1.55 13.50 21.10 15.90 20.10 1.35 4.30 5.10 2.51 1.26 2.10 max 2.06 0.026 3 0.663 0.531 0.061 0.831 0.626 0.053 0.791 0.169 inches min max 0.201 0.099 0.050 0.083 0.081 european projection issue date 0 scale 7.5mm 5 5 0 revision 13-08-2014 01 document no. z8b00174295 0.214 (bsc) - 1.96 0.077 2.25 0.089 d3 0.58 0.023 0.78 0.031 r 1.90 0.075 2.10 0.083 b3 b4 2.96 0.117 3.06 0.120 2.96 0.117 3.25 0.128 mold flash or protrusions not included pg-to247-3-46
15 IKQ120N60TA trenchstop tm series rev.2.2,2014-11-21 g c e millimeters 5.44 (bsc) c e3 d e d1 d2 l1 e l n e1 b1 a a1 b a2 b2 dim 0.59 1.35 - 20.90 16.25 15.70 1.05 19.80 13.10 3 min 4.90 2.31 1.16 1.90 1.96 0.053 0.823 0.640 0.618 0.023 0.193 0.091 0.046 0.075 0.041 0.077 0.780 0.516 0.66 16.85 1.55 13.50 21.10 15.90 20.10 1.35 4.30 5.10 2.51 1.26 2.10 max 2.06 0.026 3 0.663 0.531 0.061 0.831 0.626 0.053 0.791 0.169 inches min max 0.201 0.099 0.050 0.083 0.081 european projection issue date 0 scale 7.5mm 5 5 0 revision 13-08-2014 01 document no. z8b00174295 0.214 (bsc) - 1.96 0.077 2.25 0.089 d3 0.58 0.023 0.78 0.031 r 1.90 0.075 2.10 0.083 b3 b4 2.96 0.117 3.06 0.120 2.96 0.117 3.25 0.128 mold flash or protrusions not included pg-to247-3-46 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief
16 IKQ120N60TA trenchstop tm series rev. 2.2, 2014-11-21 revision history IKQ120N60TA previous revision revision date subjects (major changes since last revision) 1.1 2014-07-31 preliminary data sheet 2.1 2014-10-17 final data sheet 2.2 2014-11-21 update of transconductance gfs g c e millimeters 5.44 (bsc) c e3 d e d1 d2 l1 e l n e1 b1 a a1 b a2 b2 dim 0.59 1.35 - 20.90 16.25 15.70 1.05 19.80 13.10 3 min 4.90 2.31 1.16 1.90 1.96 0.053 0.823 0.640 0.618 0.023 0.193 0.091 0.046 0.075 0.041 0.077 0.780 0.516 0.66 16.85 1.55 13.50 21.10 15.90 20.10 1.35 4.30 5.10 2.51 1.26 2.10 max 2.06 0.026 3 0.663 0.531 0.061 0.831 0.626 0.053 0.791 0.169 inches min max 0.201 0.099 0.050 0.083 0.081 european projection issue date 0 scale 7.5mm 5 5 0 revision 13-08-2014 01 document no. z8b00174295 0.214 (bsc) - 1.96 0.077 2.25 0.089 d3 0.58 0.023 0.78 0.031 r 1.90 0.075 2.10 0.083 b3 b4 2.96 0.117 3.06 0.120 2.96 0.117 3.25 0.128 mold flash or protrusions not included pg-to247-3-46 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief

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